Correction of long-range effects applied to the 65-nm node [5853-107]

Correction of long-range effects applied to the 65-nm node [5853-107]

Author(s):

Belledent, J. ( Philips Semiconductors (France) )

Word, J. ( Mentor Graphics Corp. (USA) )

Trouiller, Y. ( LETI-CEA (France) )

Couderc, C. ( Philips Semiconductors (France) )

Miramond, C. ( STMicroelectronics (France) )

Toublan, O. ( Mentor Graphics Europe (France) )

Chapon, J.-D.

Baron, S. ( STMicroelectronics (France) )

Borjon, A. ( Philips Semiconductors (France) )

Foussadier, F. ( STMicroelectronics (France) )

Gardin, C.

Lucas, K.

Patterson, K. ( Freescale (France) )

Rody, Y. ( Philips Semiconductors (France) )

Sundermann, F.

10 more

Publication title:

Photomask and Next-Generation Lithography Mask Technology XII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5853

Pub. Year:

2005

Pt.:

1

Page(from):

202

Page(to):

210

Pages:

9

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819458537 [0819458538]

Language:

English

Call no.:

P63600/5853

Type:

Conference Proceedings

Details

TDL ID:	ZA00016424
Series ID:	PA00000029
Conf. info. (Name):	Photomask and next-generation lithography mask technology
Conf. info. (Number):	2005 : 12th
Conf. info. (Venue):	Yokohama, Japan
Conf. info. (Date):	2005.04.13-2005.04.15

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