Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates [6184-16]
- Author(s):
Marona L. Wisniewski P. Prystawko P. Porowski S. Suski T. ( Institute of High Pressure Physics (Poland) ) Leszczynsk M.i Grzegory I. Czernecki R. PerlinP. ( TopGaN Ltd. (Poland) ) Riemann T. Christen J. ( Otto-von-Guericke-Univ. (Germany) ) - Publication title:
- Semiconductor Lasers and Laser Dynamics II
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 6184
- Pub. Year:
- 2006
- Page(from):
- 61840G
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819462404 [0819462403]
- Language:
- English
- Call no.:
- P63600/6184
- Type:
- Conference Proceedings
Similar Items:
SPIE - The International Society of Optical Engineering |
7
Conference Proceedings
Light Emitters Fabricated on Bulk GaN Substrates: Challenges and Achievements
Materials Research Society |
2
Conference Proceedings
Load dislocation density broad area high power CW operated InGaN laser diodes [6184-17]
SPIE - The International Society of Optical Engineering |
Materials Research Society |
SPIE - The International Society of Optical Engineering |
Kluwer Academic Publishers |
SPIE - The International Society of Optical Engineering |
10
Conference Proceedings
High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
11
Conference Proceedings
Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability
Society of Photo-optical Instrumentation Engineers |
SPIE - The International Society of Optical Engineering |
Trans Tech Publications |