Epitaxy of GaN LEDs on large substrates: Si or sapphire? (Invited Paper) [6355-28]

Epitaxy of GaN LEDs on large substrates: Si or sapphire? (Invited Paper) [6355-28]

Author(s):

Dadgar, A.

Hums, C. ( Otto-von-Guericke-Univ. Magdeburg (Germany) and AZZURRO Semiconductros AG (Germany) )

Diez, A.

Schulze, F.

Blasing, J.. ( Otto-von-Guericke-Univ. Magdeburg (Germany) )

Krost, A. ( Otto-von-Guericke-Univ. Magdeburg (Germany) and AZZURRO Semiconductros AG (Germany) )

1 more

Publication title:

Advanced LEDs for solid state lighting : 5-7 September 2006, Gwangju, South Korea

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6355

Pub. Year:

2006

Page(from):

63500R

Pub. info.:

Bellingham, Wash., USA: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819464507 [0819464503]

Language:

English

Call no.:

P63600/6355

Type:

Conference Proceedings

Details

TDL ID:	ZA00016359
Series ID:	PA00000029
Conf. info. (Name):	Asia Communications and Photonics
Conf. info. (Number):	2006
Conf. info. (Venue):	Gwangju, South Korea
Conf. info. (Date):	2006.09.05-2006.09.07

Similar Items:

1 Conference Proceedings Metalorganic vapor phase epitaxy of ZnO: toward p-type conductivity S. Heinze, A. Dadgar, F. Bertram, A. Krtschil, J. Blasing, H. Witte, S. Tiefenau, T. Hempel, A. Diez, J. Christen, A. … SPIE - The International Society of Optical Engineering	7 Conference Proceedings Thin film growth of ZnO and its relation to substrate properties S. Lautenschlager, C. Neumann, S. Graubner, J. Sann, F. Eylert, N. Volbers, B. K. Meyer, J. Blasing, A. Krost, F. … SPIE - The International Society of Optical Engineering
2 Conference Proceedings Bright Future for GaN-on-Silicon (Invited) Dadgar, A., Poscherieder, M., Biasing, J., Contreras, O., Bertram, F., Riemann, T., Reiher, A., Kunze, M., Daumiller, … Electrochemical Society	8 Conference Proceedings Silicon as a substrate in multiwafer MOVPE GaN technology Alam,A., Schineller,B., Protzmann,H., Lunenburger,M., Heuken,M., Bremser,M.D., Woelk,E., Dadgar,A., Krost,A. SPIE-The International Society for Optical Engineering
3 Conference Proceedings Heteroepitaxy of GaN on Silicon: In Situ Measurements Krost, A., Dadgar, A., Schulze, F., Clos, R., Haberland, K., Zettler, T. Trans Tech Publications	9 Conference Proceedings Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods Witte, H., Fluegge, K., Dadgar, A., Krtschil, A., Krost, A., Christen, J Materials Research Society
4 Conference Proceedings Optical Characterization of a InGaN/GaN Microcavity with Epitaxial AlInN/GaN Bottom DBR A. Franke, B. Bastek, S. Sterling, O. August, S. Petzold, P. Veit, J. Christen, P. Moser, M. Wieneke, C. Berger, J. … Materials Research Society	10 Conference Proceedings Microscopic Spatial Distribution of Bound Excitons in High-Quality ZnO Bertram, F., Forster, D., Christen, J., Oleynik, N., Dadgar, A., Krost, A. Trans Tech Publications
5 Conference Proceedings Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs,AlAs/GaAs,and AIN Buffer Layers Strittmatter,A., Krost,A., Schatke,K., Bimberg,D., Blasing,J., Christen,J. Trans Tech Publications	11 Conference Proceedings Electrical Characterization of Defect States in Local Conductivity Domains in ZnO:N,As Layers Andre Krtschil, Armin Dadgar, Annette Diez, Alois Krost Materials Research Society
6 Conference Proceedings Growth of low-defect AlGan by lateral epitaxy over V-grooved sapphire substrates fabricated by wet chemical etching [6355-40] Cheong, H. S., Park, E. M., Kim, H. Y., Lee, Y. S., Hong, C.-H., Lee, H. J., Suh, E.-K. SPIE - The International Society of Optical Engineering	12 Conference Proceedings InGaN/GaN double-heterostructure LEDs on HVPE GaN-on-sapphire substrates Smith,G.M., Boutros,K.S., Szewczuk,J.W., Flynn,J.S., Phanse,V.M., Vaudo,R.P., Redwing,J.M. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12