Analysis and design of high performance Ge-on-Si resonant cavity enhanced PIN photodetectors [6352-54]

Analysis and design of high performance Ge-on-Si resonant cavity enhanced PIN photodetectors [6352-54]

Author(s):

Chen, J. ( Huazhong Univ. of Science and Technology (China) )
Zhou, Z. ( Huazhong Univ. of Science and Technology (China) and Georgia Institue of Technology (USA) )

Publication title:

Optoelectronic materials and devices : 5-7 September, 2006, Gwangju, South Korea

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6352

Pub. Year:

2006

Pt.:

1

Page(from):

63521C

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819464477 [0819464473]

Language:

English

Call no.:

P63600/6352

Type:

Conference Proceedings

Details

TDL ID:	ZA00016356
Series ID:	PA00000029
Conf. info. (Name):	Asia Communications and Photonics
Conf. info. (Number):	2006
Conf. info. (Venue):	Gwangju, South Korea
Conf. info. (Date):	2006.09.05-2006.09.07

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