Combined resist and etch modeling and correction for the 45-nm node [6349-74]

Combined resist and etch modeling and correction for the 45-nm node [6349-74]

Author(s):

Drapeau, M. ( Synopsys, Inc. (Belgium) )
Beale, D. ( Synopsys, Inc. (USA) )

Publication title:

Photomask Technology 2006

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6349

Pub. Year:

2006

Pt.:

1

Page(from):

634921

Page(to):

634921

Pages:

1

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819464446 [0819464449]

Language:

English

Call no.:

P63600/6349

Type:

Conference Proceedings

Details

TDL ID:	ZA00016353
Series ID:	PA00000029
Conf. info. (Name):	SPIE Photomask Technology : Annual BACUS Symposium on Photomask Technology
Conf. info. (Number):	2006 : 26th
Conf. info. (Venue):	Monterey, CA, USA
Conf. info. (Date):	2006.09.19-2006.09.22

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