Mask pattern correction to compensate for the effect of off-axis incidence in EUV lithography [6283-96]

Mask pattern correction to compensate for the effect of off-axis incidence in EUV lithography [6283-96]

Author(s):

Sugawara, M.
Nishiyama, I. ( Association of Super-Advanced Electronic Technologies (Japan) )

Publication title:

Photomask and Next-Generation Lithography Mask Technology XIII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6283

Pub. Year:

2006

Pt.:

1

Page(from):

62830L

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819463586 [0819463582]

Language:

English

Call no.:

P63600/6283

Type:

Conference Proceedings

Details

TDL ID:	ZA00016290
Series ID:	PA00000029
Conf. info. (Name):	Photomask and next-generation lithography mask technology
Conf. info. (Number):	2006 : 13th
Conf. info. (Venue):	Yokohama, Japan
Conf. info. (Date):	2006.04.18-2006.04.20

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