Improved breakdown model for estimating dark count rate in avalanche photodiodes with InP and InAIAs multiplication layers [6214-29]

Improved breakdown model for estimating dark count rate in avalanche photodiodes with InP and InAIAs multiplication layers [6214-29]

Author(s):

Publication title:

Laser radar technology and applications XI : 19-20 April 2006, Kissimmee, Florida, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6214

Pub. Year:

2006

Page(from):

62140R

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819462701 [0819462705]

Language:

English

Call no.:

P63600/6214

Type:

Conference Proceedings

Details

TDL ID:	ZA00016225
Series ID:	PA00000029
Conf. info. (Name):	Defense, Security, and Sensing : Laser radar technology and applications
Conf. info. (Number):	2006 : 11th
Conf. info. (Venue):	Kissimmee, FL, USA
Conf. info. (Date):	2006.04.19-2006.04.20

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