Fundamentals of the reaction-diffusion process in model EUV photoresists [6153-40]

Fundamentals of the reaction-diffusion process in model EUV photoresists [6153-40]

Author(s):

Lavery, K. A. ( National Institute of Standards and Technology (USA) )

Choi, K.-W. ( Intel Corp. (USA) )

Vogt, B. D. ( National Institute of Standards and Technology (USA) )

Prabhu, V. M. ( National Institute of Standards and Technology (USA) )

Lin, E. K. ( National Institute of Standards and Technology (USA) )

Wu, W. ( National Institute of Standards and Technology (USA) )

Satija, S. K. ( National Institute of Standards and Technology (USA) )

Leeson, M. J. ( Intel Corp. (USA) )

Cao, H. B. ( Intel Corp. (USA) )

Thompson, G. ( Intel Corp. (USA) )

Deng, H. ( Intel Corp. (USA) )

Fryer, D. S. ( Intel Corp. (USA) )

7 more

Publication title:

Advances in Resist Technology and Processing XXIII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6153

Pub. Year:

2006

Pt.:

1

Page(from):

615313

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461964 [0819461962]

Language:

English

Call no.:

P63600/6153

Type:

Conference Proceedings

Details

TDL ID:	ZA00016185
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in Resist Technology and Processing
Conf. info. (Number):	2006 : 23th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2006.02.20-2006.02.22

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