Blank Cover Image

An integrated solution for photomask manufacturing, handling, and storage at 65 nm and below [6152-139]

Author(s):
Schwitzgebel, J. ( Photronics, Inc. (USA) )
Xiao, G. ( Photronics, Inc. (USA) )
Bockwell, B. ( Photronics, Inc. (USA) )
Nozaki, S. ( Hitachi High Technologies America, Inc. (USA) )
Darvish, A. ( Fortrend Engineering (USA) )
Wu, C. ( Fortrend Engineering (USA) )
1 more
Publication title:
Metrology, Inspection, and Process Control for Microlithography XX
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6152
Pub. Year:
2006
Pt.:
2
Page(from):
61523H
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461957 [0819461954]
Language:
English
Call no.:
P63600/6152
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings 65 nm node photomask etching with zero CD process bias [5992-26]

Wu, B, Chen, J., Markovitz, E., Xiao, G., Tam, S., Kumar, A., Ibrahim, I., Yau, W. -F.

SPIE - The International Society of Optical Engineering
7 Conference Proceedings Integration Solutions for 65 nm Back End of Line Defect Reduction and Manufacturability

H. Hichri, J.S. Oakley, S.L. Grunow, C. Bunke, J. Kelp

Electrochemical Society
2 Conference Proceedings 65-nm photolithography process window qualification study with advanced e-beam metrology and inspection systems [6152-188]

Hsu, R. H, Lin, B. S. M, Wu, W. Y, Xiao, H, Jau, J

SPIE - The International Society of Optical Engineering
8 Conference Proceedings An integrated approach to the determination of a manufacturable process window in advanced microlithography [6152-118]

Cusacovich, M., Robinson, J. C., Cheng, S., Storms, G, Leray, P., Lorusso, G. F.

SPIE - The International Society of Optical Engineering
3 Conference Proceedings Critical evaluation of photomask needs for competing 65-nm node RET options

Progler, C.J., Xiao, G.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings Enhanced model-based OPC for 65 nm and below

Word V, J., Cobb, N. B.

SPIE - The International Society of Optical Engineering
4 Conference Proceedings In-line semi-electrical process diagnosis methodology for integrated process window optimization of 65nm and below technology nodes [6152-67]

Lei, M. T., Tang, K. H., Wang, Y. C., Huang, C. H., Jeng, C. C., Wang, L. K., Fang, W., Zhao, Y., Jau, J., Hsia, C. C.

SPIE - The International Society of Optical Engineering
10 Conference Proceedings Process, design, and optical proximity correction requirements for the 65-nm device generation

Lucas, K., Montgomery, P., Litt, L.C., Conley, W., Postnikov, S.V., Wu, W., Yuan, C.-M., Olivares, M., Strozewski, K., …

SPIE-The International Society for Optical Engineering
5 Conference Proceedings Photomask development for 90-nm technology

Zhang, Y., Cattle, R., Mackay, S., Xiao, G., Unruh, J., Progler, C. J.

SPIE - The International Society of Optical Engineering
11 Conference Proceedings Process, design and optical proximity correction requirements for the 65nm device generation

Lucas, K., Montgomery, P., Litt, L.C., Conley, W., Postnikov, S.V., Wu, W., Yuan, C.-M., Olivares, M., Strozewski, K., …

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Phenomena and OPC solution of ripple patterns for 65-nm node

Lai, C.-M., Ho, J.-S., Lai, C.-W., Tsai, C.-K., Tsay, C.-S., Chen, J.-H., Liu, R.-G., Ku, Y.C., Lin, B.-J.

SPIE - The International Society of Optical Engineering
12 Conference Proceedings 157-nm photomask handling and infrastructure: requirements and feasibility

Cullins,J., Muzio,E.G.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12