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GaN light-emitting triodes for high-efficiency hole injection and light emission [6134-20]

Author(s):
Kim, J. K. ( Rensselaer Polytechnic Institute (USA) )
Xi, J. Q. ( Rensselaer Polytechnic Institute (USA) )
Luo, H ( Rensselaer Polytechnic Institute (USA) )
Cho, J ( Samsung Advanced Institute of Technology (South Korea) )
Sone, C ( Samsung Advanced Institute of Technology (South Korea) )
Park, Y ( Samsung Advanced Institute of Technology (South Korea) )
Gessmann, T ( Rensselaer Polytechnic Institute (USA) )
Zavada, J. M ( U.S. Army Research Office (USA) )
Jiang, H. X ( Kansas State Univ. (USA) )
Schubert, E. F ( Rensselaer Polytechnic Institute (USA) )
5 more
Publication title:
Light-Emitting Diodes: Research, Manufacturing, and Applications X
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6134
Pub. Year:
2006
Page(from):
61340K
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461766 [0819461768]
Language:
English
Call no.:
P63600/6134
Type:
Conference Proceedings

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