Broad area high power CW operated InGaN laser diodes [6133-28]

Broad area high power CW operated InGaN laser diodes [6133-28]

Author(s):

Wisniewski, P. ( Institute of High Pressure Physics Unipress (Poland) )

Czernecki, R. ( TopGaN (poladn) )

Prystawko, P. ( Institute of High Pressure Physics Unipress (Poland) )

Maszkowicz, M. ( Warsaw Univ. of Technology (Poland) )

Leszczynski, M. ( Institute of High Pressure Physics Unipress (Poland) )

Grzegory, I. ( Institute of High Pressure Physics Unipress (Poland) and TopGaN (Poland) )

Porowski, S. ( Institute of High Pressure Physics Unipress (Poland) )

Marona, M. ( Institute of High Pressure Physics Unipress (Poland) )

Swietlik, T. ( Institute of High Pressure Physics Unipress (Poland) )

Perlin, P. ( Institute of High Pressure Physics Unipress (Poland) and TopGaN (Poland) )

5 more

Publication title:

Novel In-Plane Semiconductor Lasers V

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6133

Pub. Year:

2006

Page(from):

61330Q

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461759 [081946175X]

Language:

English

Call no.:

P63600/6133

Type:

Conference Proceedings

Details

TDL ID:	ZA00016167
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Novel In-Plane Semiconductor Lasers
Conf. info. (Number):	2006 : 5th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2006.01.23-2006.01.26

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