High power AllnGaN-based blue-violet laser diodes (Invited Paper) [6133-25]

High power AllnGaN-based blue-violet laser diodes (Invited Paper) [6133-25]

Author(s):

Nam, O. H. ( Samsung Advanced Institute of Technology (South Korea) )

Ha, K. H. ( Samsung Advanced Institute of Technology (South Korea) )

Ryu, H. Y. ( Samsung Advanced Institute of Technology (South Korea) )

Lee, S. N. ( Samsung Advanced Institute of Technology (South Korea) )

Chang, T. H. ( Samsung Advanced Institute of Technology (South Korea) )

Choi K K ( Samsung Advanced Institute of Technology (South Korea) )

Son J K ( Samsung Advanced Institute of Technology (South Korea) )

Chae J H ( Samsung Advanced Institute of Technology (South Korea) )

Chae S H ( Samsung Advanced Institute of Technology (South Korea) )

Paek H S ( Samsung Advanced Institute of Technology (South Korea) )

Sung Y J ( Samsung Advanced Institute of Technology (South Korea) )

Sakong T ( Samsung Advanced Institute of Technology (South Korea) )

Kim H G ( Samsung Advanced Institute of Technology (South Korea) )

kim K S ( Samsung Advanced Institute of Technology (South Korea) )

Kim Y H ( Samsung Advanced Institute of Technology (South Korea) )

Park, Y. J. ( Samsung Advanced Institute of Technology (South Korea) )

11 more

Publication title:

Novel In-Plane Semiconductor Lasers V

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6133

Pub. Year:

2006

Page(from):

61330N

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461759 [081946175X]

Language:

English

Call no.:

P63600/6133

Type:

Conference Proceedings

Details

TDL ID:	ZA00016167
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Novel In-Plane Semiconductor Lasers
Conf. info. (Number):	2006 : 5th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2006.01.23-2006.01.26

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