GaAs-based 1.3 um quantum dot laser diode with 3-stacked InAs DWELL (dots-in-a-well) structure and Al0.7Ga0.3As cladding layer [6129-10]

GaAs-based 1.3 um quantum dot laser diode with 3-stacked InAs DWELL (dots-in-a-well) structure and Al0.7Ga0.3As cladding layer [6129-10]

Author(s):

Kim, K W ( Korea Institute of Science and Technology (South Korea) and Korea Univ. (South Korea) )

Cho, N K ( Korea Institute of Science and Technology (South Korea) )

Ryu, S. P. ( Korea Institute of Science and Technology (South Korea) )

Song, J. D. ( Korea Institute of Science and Technology (South Korea) )

Choi, W. J. ( Korea Institute of Science and Technology (South Korea) )

Lee, J I ( Korea Institute of Science and Technology (South Korea) )

Park, J. H. ( Korea Univ. (South Korea) )

2 more

Publication title:

Quantum Dots, Particles, and Nanoclusters III

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6129

Pub. Year:

2006

Page(from):

612909

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461711 [0819461717]

Language:

English

Call no.:

P63600/6129

Type:

Conference Proceedings

Details

TDL ID:	ZA00016163
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Quantum Dots, Particles, and Nanoclusters
Conf. info. (Number):	2006 : 3rd
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2006.01.23-2006.01.24

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