Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes [6121-35]

Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes [6121-35]

Author(s):

Chae J. H ( SAMSUNG Advanced Institute of Technology (South Korea) )

Ryu H-Y ( SAMSUNG Advanced Institute of Technology (South Korea) )

Kim K-S ( SAMSUNG Advanced Institute of Technology (South Korea) )

Ha K-H ( SAMSUNG Advanced Institute of Technology (South Korea) )

Chae S ( SAMSUNG Advanced Institute of Technology (South Korea) )

Kim H ( SAMSUNG Advanced Institute of Technology (South Korea) )

Lee S-N ( SAMSUNG Advanced Institute of Technology (South Korea) )

Choi T ( SAMSUNG Advanced Institute of Technology (South Korea) )

Jang T ( SAMSUNG Advanced Institute of Technology (South Korea) )

Son J K ( SAMSUNG Advanced Institute of Technology (South Korea) )

Baek H S ( SAMSUNG Advanced Institute of Technology (South Korea) )

Sung Y J ( SAMSUNG Advanced Institute of Technology (South Korea) )

Tan S ( SAMSUNG Advanced Institute of Technology (South Korea) )

Kim Y ( SAMSUNG Advanced Institute of Technology (South Korea) )

Nam OH ( SAMSUNG Advanced Institute of Technology (South Korea) )

Park Y J ( SAMSUNG Advanced Institute of Technology (South Korea) )

11 more

Publication title:

Gallium Nitride Materials and Devices

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6121

Pub. Year:

2006

Page(from):

61210Y

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461636 [0819461636]

Language:

English

Call no.:

P63600/6121

Type:

Conference Proceedings

Details

TDL ID:	ZA00016155
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
Conf. info. (Number):	2006
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2006.01.23-2006.01.25

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