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Ferroelectric PZT/AIGaN/GaN field effecttransistors (Invited Paper) [6121-28]

Author(s):
Kang, Y.-S. ( Virginia Commonwealth Univ.(USA) )
Xiao, B. ( Virginia Commonwealth Univ.(USA) )
Alivov, Ya. I. ( Virginia Commonwealth Univ.(USA) )
Fan, Q. ( Virginia Commonwealth Univ.(USA) )
Xie, J. ( Virginia Commonwealth Univ.(USA) )
Morkoc H ( Virginia Commonwealth Univ.(USA) )
Eddy Jr C R ( Boston Univ. (USA) )
2 more
Publication title:
Gallium Nitride Materials and Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6121
Pub. Year:
2006
Page(from):
61210S
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461636 [0819461636]
Language:
English
Call no.:
P63600/6121
Type:
Conference Proceedings

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