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Investigation of the strain distribution of GaN/AIN wurtzite structure material self-organized truncated pyramid shaped quantum dot (Invited Paper) [6121-03]

Author(s):
  • Liu, Y. ( Beijing Univ. of Posts and Telecommunications (China) and Key Lab. of Optical Communication and Lightwave Technologies (China) )
  • Yu, Z. ( Beijing Univ. of Posts and Telecommunications (China) and Key Lab. of Optical Communication and Lightwave Technologies (China) )
Publication title:
Gallium Nitride Materials and Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6121
Pub. Year:
2006
Page(from):
612104
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461636 [0819461636]
Language:
English
Call no.:
P63600/6121
Type:
Conference Proceedings

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