Photoluminescene properties of Er-doped Y2O3 thin films by radical-enchanced atomic layer deposition [6002-18]

Photoluminescene properties of Er-doped Y2O3 thin films by radical-enchanced atomic layer deposition [6002-18]

Author(s):

Van T. T. ( Univ. of California, Los Angeles (USA) )
Bargar J. ( Stanford Synchroton Radiation Lab. (USA); )
Ostroumov R. ( Univ. of California, Los Angeles (USA); )
Wang K. L. ( Stanford Synchroton Radiation Lab. (USA); )
Chang J. P. ( Univ. of California, Los Angeles (USA); )

Publication title:

Nanofabrication: Technologies, Devices, and Applications II

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6002

Pub. Year:

2005

Page(from):

60020H

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819460264 [0819460265]

Language:

English

Call no.:

P63600/6002

Type:

Conference Proceedings

Details

TDL ID:	ZA00016038
Series ID:	PA00000029
Conf. info. (Name):	Optics East : Nanofabrication
Conf. info. (Number):	2005 : 2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2005.10.23-2005.10.25

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