Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering [5941-48]

Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering [5941-48]

Author(s):

Jamil, M.

Grandusky, J. R.

Jindal,. V.

Shahedipour-Sandvik, F. ( Univ, of Albany-SUNY (USA); )

Guha, S.

Arif, M. ( Univ. of Missouri-Columbia (USA) )

1 more

Publication title:

Fifth international conference on solid state lighting : 1-4 August 2005, San Diego, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5941

Pub. Year:

2005

Page(from):

59411E

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819459466 [0819459461]

Language:

English

Call no.:

P63600/5941

Type:

Conference Proceedings

Details

TDL ID:	ZA00015978
Series ID:	PA00000029
Conf. info. (Name):	Optics & Photonics : International conference on solid state lighting
Conf. info. (Number):	2005 : 5th
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	2005.08.01-2005.08.04

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