Transient Charging Effects and Its Implications to The Reliablility of High-k Dielectrics

Transient Charging Effects and Its Implications to The Reliablility of High-k Dielectrics

Author(s):

Lee, B. H

Publication title:

Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices

Title of ser.:

NATO science series. Series 2, Mathematics, physics and chemistry

Ser. no.:

220

Pub. Year:

2006

Page(from):

161

Page(to):

175

Pages:

15

Pub. info.:

Dordrecht: Springer

ISBN:

9781402043659 [1402043651]

Language:

English

Call no.:

N17050/220

Type:

Conference Proceedings

Details

TDL ID:	ZA00015853
Series ID:	PA00000025
Conf. info. (Name):	NATO Advanced Research Workshop on Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices
Conf. info. (Number):	2005
Conf. info. (Venue):	St. Petersburg, Russia
Conf. info. (Date):	2005.07.11-2005.07.14

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