A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules

A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules

Author(s):

Agarwal, A.K.

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

2

Page(from):

1397

Page(to):

1400

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

Similar Items:

1 Conference Proceedings High Temperature Characterization of 4H-SiC Bipolar Junction Transistors Krishnaswami, S., Agarwal, A.K., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, … Trans Tech Publications	7 Conference Proceedings A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices Krishnaswami, S., Ryu, S.H., Heath, B., Agarwal, A.K., Palmour, J.W., Geil, B.R., Lelis, A.J., Scozzie, C.J. Trans Tech Publications
2 Conference Proceedings First Demonstration of 2.1 kW Output Power at 425 MH2 Using 4H-SiC RF Power BJTs Agarwal, A.K, Husna, F., Haley, J., Bartlow, H., McCalpin, B., Krishnaswami, S., Capell, C., Ryu, S.H., Palmour, J.W. Trans Tech Publications	8 Conference Proceedings 4H-SiC DMOSFETs for High Speed Switching Applications Ryu, S. H., Krishnaswami, S., Das, M., Richmond, J., Agarwal, A., Palmour, J., Scofield, J. Trans Tech Publications
3 Conference Proceedings Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs Agarwal, A.K., Krishnaswami, S., Richmond, J., Capell, C., Ryu, S.H., Palmour, J., Geil, B.R, Katsis, D., Scozzie, C.J., … Trans Tech Publications	9 Conference Proceedings Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor S.H. Ryu, D.J. Lichtenwalner, E. van Brunt, C. Capell, M.J. O'Loughlin, C. Jonas, Y. Lemma, J. Zhang, J. Richmond, A.A. … Trans Tech Publications
4 Conference Proceedings A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed Q.C.J. Zhang, J. Richmond, C. Capell, A.K. Agarwal, J.W. Palmour Trans Tech Publications	10 Conference Proceedings A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs S.H. Ryu, S. Krishnaswami, B.A. Hull, B. Heath, F. Husna, J. Richmond, A. Agarwal, J. Palmour, J. Scofield Trans Tech Publications
5 Conference Proceedings Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs Ryu, S.H., Krishnaswami, S., Hull, B.A., Heath, B., Das, M.K., Richmond, J.T., Agarwal, A.K., Palmour, J.W., Scofield, … Trans Tech Publications	11 Conference Proceedings Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor Agarwal, A.K., Ivanov, P.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L., Ryu, S.H., Shur, M.S. Trans Tech Publications
6 Conference Proceedings Development of 10 kV 4H-SiC Power DMOSFETs Ryu, S.H., Agarwal, A., Krishnaswami, S., Richmond, J., Palmour, J. Trans Tech Publications	12 Conference Proceedings Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs Ivanov, P.A., Levinshtein, M.E., Agarwal, A.K., Palmour, J.W., Ryu, S.H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12