Inherently Safe Resonant Reset Fotward Converter Using a Bias-Enhanced SiC JFET

Inherently Safe Resonant Reset Fotward Converter Using a Bias-Enhanced SiC JFET

Author(s):

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

2

Page(from):

1211

Page(to):

1214

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

Similar Items:

1 Conference Proceedings SiC Smart Power JFET Technology for High-Temperature Applications Sankin, I., Bondarenko, V., Kelley, R.L., Casady, J.B. Trans Tech Publications	7 Conference Proceedings Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET Los, A.V., Mazzola, M.S., Kajfez, D., McDaniel, B.T., Smith, C.E., Kretchmer, J., Rowland, L.B., Casady, J.B. Trans Tech Publications
2 Conference Proceedings Fast Switching (41 MHz), 2.5 mΩ・cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications Cheng, L., Casady, J.R.B., Mazzola, M.S., Bondarenko, V., Kelley, R.L., Sankin, I., Merrett, J.N., Casadv, J.B. Trans Tech Publications	8 Conference Proceedings Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs Merrett, J. N., Williams, J. R., Cressler, J. D., Sutton, A., Cheng, L., Bondarenko, V., Sankin, I., Seale, D., Mazzola, … Trans Tech Publications
3 Conference Proceedings SiC Lateral Trench JFET for Harsh-Environment Wireless Systems I. Sankin, V. Bondarenko, D.C. Sheridan, M.S. Mazzola, J.B. Casady Trans Tech Publications	9 Conference Proceedings Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules D.C. Sheridan, A. Ritenour, V. Bondarenko, J.B. Casady, R.L. Kelley Trans Tech Publications
4 Conference Proceedings A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices J.B. Casady, D.C. Sheridan, R.L. Kelley, V. Bondarenko, A. Ritenour Trans Tech Publications	10 Conference Proceedings High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress L. Cheng, M.S. Mazzola, D.C. Sheridan Trans Tech Publications
5 Conference Proceedings Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits Mazzola, M.S., Casady, J.B., Merrett, N., Sankin, I., Draper, W., Seale, D., Bondarenko, V., Koshka, Y., Gafford, J., … Trans Tech Publications	11 Conference Proceedings High-Temperature Static and Dynamic Reliability Study of 4H-SIC Vertical-Channel JFETs for High-Power System Applications L. Cheng, P. Martin, M.S. Mazzola, D.C. Sheridan, R.L. Kelly Trans Tech Publications
6 Conference Proceedings Highly Uniform SiC Epitaxy for MESFET Fabrication Zhang, J., Mazzola, J., Hoff, C., Rivas, C., Romano, E., Casady, J.R.B., Mazzola, M.S., Casady, J.B., Matocha, K.S. Trans Tech Publications	12 Conference Proceedings Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation Cheng, L., Casady, J.R.B., Mazzola, J., Casady, J.B., Koshka, Y., Bondarenko, V. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12