Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal

Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal

Author(s):

Das, M.K.

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

2

Page(from):

967

Page(to):

970

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

Similar Items:

1 Conference Proceedings A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs S.H. Ryu, S. Krishnaswami, B.A. Hull, B. Heath, F. Husna, J. Richmond, A. Agarwal, J. Palmour, J. Scofield Trans Tech Publications	7 Conference Proceedings High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications Hull, B.A., Das, M.K., Richmond, J.T., Heath, B., Sumakeris, J.J., Geil, B.R., Scozzie, C.J. Trans Tech Publications
2 Conference Proceedings Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2 Wang, W., Banerjee, S., Chow, T.P., Gutmann, R.J., Issacs-Smith, T., Williams, J., Jones, K.A., Lelis, A., Tipton, W., … Trans Tech Publications	8 Conference Proceedings Improved Observation of SiC/SiO₂ Oxide Charge Traps Using MOS C-V D.B. Habersat, A.J. Lelis Trans Tech Publications
3 Conference Proceedings A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices Krishnaswami, S., Ryu, S.H., Heath, B., Agarwal, A.K., Palmour, J.W., Geil, B.R., Lelis, A.J., Scozzie, C.J. Trans Tech Publications	9 Conference Proceedings High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs J. Scofield, H. Kosai, B. Jordan, S.H. Ryu, S. Krishnaswami, F. Husna, A. Agarwal Trans Tech Publications
4 Conference Proceedings Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs Ryu, S.H., Krishnaswami, S., Hull, B.A., Heath, B., Das, M.K., Richmond, J.T., Agarwal, A.K., Palmour, J.W., Scofield, … Trans Tech Publications	10 Conference Proceedings Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap C.J. Cochrane, P.M. Lenahan, A.J. Lelis Trans Tech Publications
5 Conference Proceedings Critical Issues for MOS Based Power Devices in 4H-SiC S.H. Ryu, S. Dhar, S.K. Haney, A. Agarwal, A.J. Lelis Trans Tech Publications	11 Conference Proceedings Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors C.J. Cochrane, P.M. Lenahan, A.J. Lelis Trans Tech Publications
6 Conference Proceedings Reliability of High Voltage 4H-SiC MOSFET Devices Sumi Krishnaswami, Sei-Hyung Ryu, Bradley Heath, Anant Agarwal, John Palmour, Aivars Lelis, Charles Scozzie, James … Materials Research Society	12 Conference Proceedings 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200oC Baseplate Temperature Richmond, J., Ryu, S.H., Krishnaswami, S., Agarwal, A.K., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, C.J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12