High Dose High Temperature Ion Implantation of Ge into 4H-SiC

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

Author(s):

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

2

Page(from):

851

Page(to):

854

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

Similar Items:

1 Conference Proceedings SIMS Investigation of Ge_x(4H-SiC)_1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2 H. Peyre, J. Pezoldt, M. Voelskow, W. Skorupa, J. Camassel Trans Tech Publications	7 Conference Proceedings Investigation of Ion-Implantation Induced Damage in 6H-SiC by RBS/C and PAS Wirth,H., Anwand,W., Brauer,G., Voelskow,M., Pankuin,D., Skorupa,W., Coleman,P.G. Trans Tech Publications
2 Conference Proceedings Structure and Lattice Location of Ge Implanted 4H-SiC T. Kups, K. Tonisch, M. Voelskow, W. Skorupa, A. Konkin Trans Tech Publications	8 Conference Proceedings Ion Beam Synthesis:A Novel Method of Producing(SiC)1-x(AlN)x Layers Yankov,R.A., Fukarek,W., Voelskow,M., Pezoldt,J., Skorupa,W. Trans Tech Publications
3 Conference Proceedings Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC Pezoldt, J., Kups, T., Weih, P., Stauden, T., Ambacher, O. Trans Tech Publications	9 Conference Proceedings Conductive Tungsten-Based Layers Synthesized by Ion Implantation Into 6H-Silicon Carbide Weishart, H., Schoneich, J., Voelskow, M., Skorupa, W. MRS - Materials Research Society
4 Conference Proceedings Computer simulation and RBS/C studies of high-dose N+ and Al- co-implantation in 6H-SiC Kharlamov,V.S., Kulikov,D.V., Trushin,Yu.V., Tsigankov,D.N., Yankov,R.A., Voelskow,M., Skorupa,W., Pezoldt,J. SPIE-The International Society for Optical Engineering	10 Conference Proceedings Conductive Tungsten-Based Layers Synthesized by Ion Implantation into 6H-Silicon Carbide Weishart, H., Schoneich, J., Voelskow, M., Skorupa, W. MRS - Materials Research Society
5 Conference Proceedings A Computational Model for the Formation of(SiC)1-x(AlN)x Structures by Hot,High-Dose N+ and Al+ Co-Implants in 6H-SiC Truschin,Yu.V., Yankov,R.A., Kharlamov,V.S., Kulikov,D.V., Tsigankov,D.N., Kreissig,U., Voelskow,M., Pezoldt,J., … Trans Tech Publications	11 Conference Proceedings High Dose Implantation in 6H-SiC Heera, V., Skorupa, W., Stoemenos, J., Pecz, B. Trans Tech Publications
6 Conference Proceedings Formation of Buried Layers of (SiC)1-x(AlN)x in 6H-SiC Using Ion-Beam Synthesis Yankov, R. A., Hatzopoulos, N., Fukarek, W., Voelskow, M., Heera, V., Pezoldt, J., Skorupa, W. MRS - Materials Research Society	12 Conference Proceedings Flash Lamp Supported Deposition of 3C-SiC (FLASiC) ? a Promising Technique to Produce High Quality Cubic SiC Layers Skorupa, W., Panknin, D., Anwand, W., Voelskow, M., Ferro, G., Monteil, Y., Leycuras, A., Pezoldt, J., McMahon, R., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12