Blank Cover Image

A Simple Method to Synthesize Nano-Sized 3C-SiC Powder Using Hexamethyldisilane in a CVD Reactor

Author(s):
Publication title:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
Title of ser.:
Materials science forum
Ser. no.:
527-529
Pub. Year:
2006
Pt.:
1
Page(from):
767
Page(to):
770
Pages:
4
Pub. info.:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Selective Epitaxial Growth of3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor

Gupta, A., Jacob, C.

Trans Tech Publications
7 Conference Proceedings (4bg) Nano-Biomaterials: Sensors, Fuel Cells and Robust Hybrid Composites Using Room-Temperature CVD

Gautam Gupta

American Institute of Chemical Engineers
2 Conference Proceedings Channel Epitaxy of 3C-SiC on Si Substrates by CVD

Nishino, S., Okui, Y., Jacob, C., Ohshima, S.

Materials Research Society
8 Conference Proceedings Processing-Microstructure-Mechanical Properties of an Al-Cu/SiC Metal Matrix Composite Synthesized Using Disintegrated Melt Deposition Technique

Gupta,M., Lai,M.O., Soo,C.Y.

Trans Tech Publications
3 Conference Proceedings Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCI Using Atmospheric CVD

Chen, Y., Masuda, Y., Jacob, C., Shirafuji, T., Nishino, S.

Trans Tech Publications
9 Conference Proceedings Contact Fracture Behaviors of Ti3SiC2 Synthesized by Hot Pressign Using TiCx and Si Powder Mixture

Hwang, S. S., Park, S. W., Cho, S. J., Lee, D. B.

Trans Tech Publications
4 Conference Proceedings Epitaxial Growth of SiC on AIN/Spphire Using Hexamethyldisilane by MOVPE

Teker, Kasif, Lee, Ki Hoon, Jacob, Chacko, Nishino, Shigehiro, Pirouz, Pirouz

Materials Research Society
10 Conference Proceedings Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates

B. Wagner, J.D. Oliver, N.B. Singh, M. King, S. McLaughlin

Trans Tech Publications
5 Conference Proceedings Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD

Nishino, S., Masuda, Y., Ohshima, S., Jacob, C.

Trans Tech Publications
11 Conference Proceedings Effect of TMG Addition on the Epitaxial Growth of 3C-SiC on Si(100) and Si(111) Using Hexamethyldisilane

Lee, Ki Hoon, Teker, Kasif, Zhang, Ming, Chung, Juyong, Pirouz, Pirouz

Materials Research Society
6 Conference Proceedings DLTS Study Of 3C-SiC Grown On Si Using Hexamethyldisilane

Kato, Masashi, Ichimura, Masaya, Arai, Eisuke, Masuda, Yasuichi, Chen, Yi, Nishino, Shigehiro, Tokuda, Yutaka

Materials Research Society
12 Conference Proceedings Aluminum Doping of 4H-SiC Grown with HexaMethylDiSilane

Sartel, C., Souliere, V., Zielinski, M., Monteil, Y., Camassel, J., Rushworth, S.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12