Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

Author(s):

Contreras, S.

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

1

Page(from):

633

Page(to):

636

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

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