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Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition

Author(s):
Huh, S.W.
Polyakov, A.Y.
Chung, H.J.
Nigam, S.
Skowronski, M.
Glaser, E.R.
Carlos, W.E.
Fanton, M.A.
Smirnov, N.B.
4 more
Publication title:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
Title of ser.:
Materials science forum
Ser. no.:
527-529
Pub. Year:
2006
Pt.:
1
Page(from):
497
Page(to):
500
Pages:
4
Pub. info.:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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