Why are Only Some Basal plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?

Why are Only Some Basal plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?

Author(s):

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

1

Page(from):

419

Page(to):

422

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

Similar Items:

1 Conference Proceedings Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers Zhang, Z.H., Sudarshan, T.S. Trans Tech Publications	7 Conference Proceedings Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle K. Masumoto, S. Ito, H. Goto, H. Yamaguchi, K. Tamura Trans Tech Publications
2 Conference Proceedings Performance of Silicon Carbide PiN Diodcs Fabricated on Basal Plane Dislocation-Free Epilayers Zhang, Z.H., Grekov, A.E., Sadagopan, P., Maximenko, S.I., Sudarshan, T.S. Trans Tech Publications	8 Conference Proceedings Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers I. Kamata, M. Nagano, H. Tsuchida Trans Tech Publications
3 Conference Proceedings Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method H.Z. Song, T.S. Sudarshan Trans Tech Publications	9 Conference Proceedings Open Core Dislocations and Surface Energy of SiC Maximenko, S.I., Pirouz, P., Sudarshan, T.S. Trans Tech Publications
4 Conference Proceedings Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures X. Zhang, M. Nagano, H. Tsuchida Trans Tech Publications	10 Conference Proceedings X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC R. Tanuma, D. Mori, I. Kamata, H. Tsuchida Trans Tech Publications
5 Conference Proceedings Inverted Pyramid Defects in 4H-SiC Epilayers A. Shrivastava, P.G. Muzykov, T.S. Sudarshan Trans Tech Publications	11 Conference Proceedings Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers P.B. Klein, J.D. Caldwell, A. Shrivastava, T.S. Sudarshan Trans Tech Publications
6 Conference Proceedings Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry H. Matsuhata, H. Yamaguchi, I. Nagai, T. Ohno, R. Kosugi Trans Tech Publications	12 Conference Proceedings Cross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiC T. Sato, Y. Orai, T. Isshiki, M. Fukui, K. Nakamura Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12