Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

Author(s):

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

1

Page(from):

415

Page(to):

418

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

Similar Items:

1 Conference Proceedings Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping Miyanagi, T., Tsuchida, H., Kamata, I., Nakamura, T., Ishii, R., Nakayama, K., Sugawara, Y. Trans Tech Publications	7 Conference Proceedings Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications
2 Conference Proceedings Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process H. Tsuchida, I. Kamata, M. Nagano, L. Storasta, T. Miyanagi Trans Tech Publications	8 Conference Proceedings Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications
3 Conference Proceedings Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes Nakamura, T., Miyanagi, T., Kamata, I., Tsuchida, H. Trans Tech Publications	9 Conference Proceedings Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers I. Kamata, M. Nagano, H. Tsuchida Trans Tech Publications
4 Conference Proceedings Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy Tsuchida, H., Kamata, I., Miyanagi, T., Nakamura, T., Nakayama, K., Ishii, R., Sugawara, Y. Trans Tech Publications	10 Conference Proceedings Homoepitaxial Growth and Characterization of Thick SiC Layers With a Reduced Micropipe Density Tsuchida, H., Kamata, I., Izumi, S., Tawara, T., Jikimoto, T., Miyanagi, T., Nakamura, T., Izumi, K. Materials Research Society
5 Conference Proceedings Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates Tsuehida, H., Miyanagi, T., Kamata, I., Nakamura, T., Izumi, K., Nakayama, K., Ishii, R., Asano, K., Sugawara, Y. Trans Tech Publications	11 Conference Proceedings Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers Izumi, S., Tsuchida, H., Tawara, T., Kamata, I., Izumi, K. Trans Tech Publications
6 Conference Proceedings Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging R. Ishii, T. Miyanagi, I. Kamata, H. Tsuchida, K. Nakayama, Y. Sugawara Trans Tech Publications	12 Conference Proceedings Dynamic Characteristics of 4H-SiC pin Dlode on (000-1)C-Face with Small Forward Degradation Nakayama, K., Sugawara, Y., Ishii, R., Tsuchida, H., Miyanagi, T., Kamata, I., Nakamura, T. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12