Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers

Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers

Author(s):

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

1

Page(from):

411

Page(to):

414

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

Similar Items:

1 Conference Proceedings High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers I. Kamata, M. Nagano, H. Tsuchida, Y. Chen, M. Dudley Trans Tech Publications	7 Conference Proceedings X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC R. Tanuma, D. Mori, I. Kamata, H. Tsuchida Trans Tech Publications
2 Conference Proceedings High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers Isaho Kamata, Hidekazu Tsuchida, William M. Vetter, Michael Dudley Materials Research Society	8 Conference Proceedings Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography R. Tanuma, D. Mori, I. Kamata, H. Tsuchida Trans Tech Publications
3 Conference Proceedings Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications	9 Conference Proceedings Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures X. Zhang, M. Nagano, H. Tsuchida Trans Tech Publications
4 Conference Proceedings Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications	10 Conference Proceedings Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide Y. Chen, G. Dhanaraj, W.M. Vetter, R.H. Ma, M. Dudley Trans Tech Publications
5 Conference Proceedings Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers I. Kamata, M. Nagano, H. Tsuchida Trans Tech Publications	11 Conference Proceedings Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices Dudley, M., Huang, X., Vetter, W.M., Neudeck, P.G. Trans Tech Publications
6 Conference Proceedings Contrast Mechanism in Superscrew Dislocation Images on Synchrotron Back-Reflection Topographs Huang, X. R., Dudley, M., Vetter, W. M., Huang, W., Wang, S., Carter, C. H., Jr. MRS - Materials Research Society	12 Conference Proceedings Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers I. Kamata, X. Zhang, H. Tsuchida Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12