Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals

Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals

Author(s):

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

1

Page(from):

343

Page(to):

346

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

Similar Items:

1 Conference Proceedings Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy T. Kitamura, S. Nakashima, T. Kato, K. Kojima, H. Okumura Trans Tech Publications	7 Conference Proceedings Reliable Method for Eliminating Stacking Fault on 3C-SiC(001) N. Hatta, T. Kawahara, K. Yagi, H. Nagasawa, S.A. Reshanov Trans Tech Publications
2 Conference Proceedings Characterization of SiC Crystals by Using Deep UV Excitatiotl Raman Spectroscopy Nakashima, S., Mitani, T. Trans Tech Publications	8 Conference Proceedings Stacking Faults in 3C-SiC Relax Lattice Deformation Hatta, N., Yagi, K., Kawahara, T., Nagasawa, H. Trans Tech Publications
3 Conference Proceedings Raman Scattering Analysis of Electrical Property and Crystallinity in Freestanding GaN Crystals with Various Impurity Concentrations T. Kitamura, S. Nakashima, H. Okumura Trans Tech Publications	9 Conference Proceedings Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates Hagiwara,C., Itoh,K.M., Muto,J., Nagasawa,H., Yagi,K., Harirna,H., Mizoguchi,K., Nakashima,S. Trans Tech Publications
4 Conference Proceedings Sensitive Detection of Defects in α and β SiC by Raman Scattering Nakashima, S., Nakatake, Y., Ishida, Y., Takahashi, T., Okumura, H. Trans Tech Publications	10 Conference Proceedings Switch-Back Epitaxy' as a Novel Technique for Reducing Stacking Faults in 3C-SiC Yagi, K., Kawahara, T., Hatta, N., Nagasawa, H. Trans Tech Publications
5 Conference Proceedings Sensitive Detection of Defects in α and β SiC by Raman Scattering Nakashima, S., Nakatake, Y., Ishida, Y., Takahashi, T., Okumura, H. Trans Tech Publications	11 Conference Proceedings Carrier Density Evaluation in P-Type SiC by Raman Scattering Harima, H., Hosoda, T., Nakashima, S. Trans Tech Publications
6 Conference Proceedings Propagation of Stacking Faults in 3C-SiC H. Nagasawa, T. Kawahara, K. Yagi, N. Hatta Trans Tech Publications	12 Conference Proceedings Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping Y. Umeno, K. Yagi, H. Nagasawa Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12