Selective Epitaxial Growth of3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor
- Author(s):
- Publication title:
- Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
- Title of ser.:
- Materials science forum
- Ser. no.:
- 527-529
- Pub. Year:
- 2006
- Pt.:
- 1
- Page(from):
- 303
- Page(to):
- 306
- Pages:
- 4
- Pub. info.:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494255 [0878494251]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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