Concentration Effects on n-GaN Schottky Diode Current-Voltage (i-v) Characteristics

Concentration Effects on n-GaN Schottky Diode Current-Voltage (i-v) Characteristics

Author(s):

Publication title:

Functional materials and devices : papers presented at the International Conference on Functional Materials and Devices 2005 (ICFMD-2005), held in Kuala Lumpur, Malaysia, 6th-8th June 2005

Title of ser.:

Materials science forum

Ser. no.:

517

Pub. Year:

2006

Page(from):

159

Page(to):

164

Pages:

6

Pub. info.:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494040 [0878494049]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015824
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Functional Materials and Devices - ICFMD
Conf. info. (Number):	2005
Conf. info. (Venue):	Kuala Lumpur, Malaysia
Conf. info. (Date):	2005.06.06-2005.06.08

Similar Items:

1 Conference Proceedings Temperature Variation Effects on Current-Voltage (i-v) Characteristics of A-GaN Schottky Diode Munir, T., Abdul Aziz, A., Abdullah, M.J., Ahmed, N.M. Trans Tech Publications	7 Conference Proceedings Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces Faisal, M., Asghar, M., Mahmood, Khalid, Willander, Magnus, Nur, O. Trans Tech Publications
2 Conference Proceedings Anomalous Scatter of Forward Current-Voltage Characteristics of He⁺-Irradiated Ni/4HSiC Schottky Diodes A.M. Strel'chuk, V.V. Zelenin, A.N. Kuznetsov, J. Tringe, A.V. Davydov Trans Tech Publications	8 Conference Proceedings Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by MOCVD Egawa, T., Ishikawa, H., Yamamoto, K., Jimbo, T., Umeno, M. MRS - Materials Research Society
3 Conference Proceedings Temperature Dependent Performance of GaN Schottky Diode Rectifiers Cao, X. A., Dang, G. T., Zhang, A. P., Ren, F., Pearton, S. J., Lee, C. -M., Chuo, C. -C., Chyi, J. -I., Chi, G. C., … Trans Tech Publications	9 Conference Proceedings High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension K. Vassilevski, I. Nikitina, A. Horsfall, N.G. Wright, A.G. O'Neill, K.P. Hilton, A.G. Munday, A.J. Hydes, M.J. Uren, … Trans Tech Publications
4 Conference Proceedings Influence of Surface Defects on the Characteristics of GaN Schottky Diodes Duboz, J-Y., Binet, F., Laurent, N., Rosencher, E., Scholz, F., Harle, V., Briot, O., Gil, B., Aulombard, R. L. MRS - Materials Research Society	10 Conference Proceedings STEP-LIKE CURRENT-VOLTAGE CHARACTERISTICS IN METAL / a-Si:H / METAL STRUCTURES Hajto, J., Snell, A.J., Rose, M.J., Owen, A.E., Osborne, I.S., Kosa, T., Holmes, A., Gibson, R.A.G. Materials Research Society
5 Conference Proceedings Characteristics of Ni-Based Bi-Layer Contacts on GaN Hassan, Z., Yam, F. K., Yap, Z. J., Abdul Aziz, A., Ibrahim, K. Trans Tech Publications	11 Conference Proceedings Comparison of Current - Voltage Characteristics of n - and p-Type 6H-SiC Schottky Diodes Zhang, Q., Madangarli, V., Gao, Y., Sudarshan, T.S. Materials Research Society
6 Conference Proceedings Current-voltage characteristics of ungated AlGaN/GaN heterostructures Albrecht, J. D., Ruden, P. P., Binari, S. C., Ikossi-Anastasiou, K., Ancona, M. G., Henry, R. L., Koleske, D. D., … MRS-Materials Research Society	12 Conference Proceedings The Effects of Altitude Levels on ²²²Rn Concentration in Academic Building at Universiti Malaysia Kelantan Jeli Campus M.K.A. Abdul Razab, S.F. Abd Karim, N.E. Azhar, N.L. Hamzah, N.H. Abdullah, A. Mohamed Noor, M. Mohamed, Z. Abdullah, N. … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12