Blank Cover Image

Reduction of Effective Barrier Height in PtSi-p-Si Schottky Diodes Using Low Energy Ion Implantation

Author(s):
Publication title:
Thin films and interfaces : proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
10
Pub. Year:
1982
Page(from):
419
Page(to):
424
Pages:
6
Pub. info.:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444007742 [0444007741]
Language:
English
Call no.:
M23500/10
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings THE EFFECTS OF HIGH AND LOW DOSE HYDROGEN ION IMPLANTATIONS ON Al/n-Si SCHOTTKY DIODES

Yapsir, A. S., Hadizad, P., Lu, T. -M., Corelli, J. C., Corbett, J. W., Lanford, W. A., Bakhru, H.

Materials Research Society
7 Conference Proceedings The effects of PtxSi growth on the redistribution of p-type dopants in silicon

Wei, C. Y., Katz, W., Smith, G.

North-Holland
2 Conference Proceedings A BEEM Study of PtSi Schottky Contacts on Ion-Milled Si

Ru, G-P., Detavernier, C., Donaton, R. A., Blondeel, A., Clauws, P., Meirhaeghe, R. L. Van, Cardon, F., Maex, K., Qu, …

MRS - Materials Research Society
8 Conference Proceedings Low Energy Ion Implantation of As During Si-MBE

Collart, E. J. H., Gravesteijn, D. J., Lathouwers, E. G. C., Kersten, W. J.

MRS - Materials Research Society
3 Conference Proceedings High barrier height n-GaN schottky diodes with a barrier height of 1.3eV by using sputtered copper metal

Lai, W. C., Yokoyama, M., Chang, C. Y., Guo, J. D., Tsang, J. S., Chan, S. H., Sze, S. M.

MRS-Materials Research Society
9 Conference Proceedings THE GROWN OF EFFECTIVE POTENTIAL BARRIER HEIGHT IN Au(100) n-GaP CONTACT INDUCED BY PHOSPHOROUS ION IMPLANTATION

Ivashchenko, Antol I., Kopanskaya, F. Ya., Solomonov, A. I., Tarchencko, V. P.

Materials Research Society
4 Conference Proceedings LATERAL VARIATION IN THE SCHOTTKY BARRIER HEIGHT AND OBSERVATION OF CRITICAL LENGTHS AT Au/PtSi/(100)Si AND Au/(100)GaAs DIODES

Talin, A. Alec, Ngo, Tue, Williams, R. Stanley, Morgan, Brent A., Ring, Ken M., Kavanagh, Karen L.

MRS - Materials Research Society
10 Conference Proceedings Effects of Interface Structure on the Electrical Characteristics of PtSi-Si Schottky Barrier Contacts

Tsaur, B. -Y., Silversmith, D. J., Mountain, R. W., Anderson Jr., C. H.

North-Holland
5 Conference Proceedings Formation of high-performance PtSi/p-Si Schottky barrier detector using high-resolution transmission electron microscope

Wang,W.-S., Ho,C., Chuang,T.-M

SPIE-The International Society for Optical Engineering
11 Conference Proceedings Photoelectric characteristics of PtSi-Si Schottky barrier with heavily boron-doped nanolayer

Voitsekhovskii,A.V., Kokhanenko,A.P., Korotaev,A.G., Nesmelov,S.N.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Schottky-Barrier Modification of Low-Energy Ar-Ion Bombarded GaAs and Si

Deenapanray, P. N. K., Auret, F. D., Goodman, S. A.

MRS - Materials Research Society
12 Conference Proceedings High-performance 256｡ﾟ244 PtSi Schottky-Barrier IRCCD imager

Yeh,R.-N., Lin,I.-S., Yeh,S.-H., Liau,R.-H., Wang,W.-S., Chuang,T.-M., Yen,W.-C., Cherng,Y.-T., Chang,H.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12