Binary HfO2:SiO2 Used as High-k Gate Oxide Material in Combinatorial Material Library Method

Binary HfO2:SiO2 Used as High-k Gate Oxide Material in Combinatorial Material Library Method

Author(s):

Chao, Wen-Hsuan

Publication title:

Combinatorial methods and informatics in materials science : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

894

Pub. Year:

2006

Page(from):

91

Page(to):

98

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998483 [1558998489]

Language:

English

Call no.:

M23500/894

Type:

Conference Proceedings

Details

TDL ID:	ZA00015791
Series ID:	PA00000011
Conf. info. (Name):	Symposium on combinatorial methods and informatics in materials science
Conf. info. (Number):	2005
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2005.11.28-2005.12.01

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