High Degree of Crystalline Perfection in Spontaneously Grown GaN Nanowires | 東京工業大学附属図書館文献データベース

Blank Cover Image

High Degree of Crystalline Perfection in Spontaneously Grown GaN Nanowires

Author(s):

Bertness, Kris A.

Schlager, J. B.

Barker, X. J. M.

Blanchard, P. T.

Publication title:

GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

892

Pub. Year:

2006

Page(from):

799

Page(to):

804

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998469 [1558998462]

Language:

English

Call no.:

M23500/892

Type:

Conference Proceedings

Details

TDL ID:	ZA00015789
Series ID:	PA00000011
Conf. info. (Name):	Symposium on GaN, AIN, InN and related materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2005.11.28-2005.12.02

Similar Items:

1 Conference Proceedings Electron Microscope Study of Strain in InGaN Quantum Wells in GaN Nanowires Roy Geiss, Kris Bertness, Alexana Roshko, David Read Materials Research Society	7 Conference Proceedings GaN and AIN layers grown by nano epitaxial lateral overgrowth technique on porous substrates Mynbaeva, M., Titkov, A., Kryzhanovski, A., Zubrilov, A., Ratnikov, V., Davydov, V., Kuznetsov, N., Mynbaev, K., … MRS-Materials Research Society
2 Conference Proceedings Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGaN Films Using Prism-Coupling Techniques Correlated With Spectroscopic Reflection/Transmission … Sanford, Norman A., Robins, Lawrence H., Davydov, Albert V., Shapiro, Alexander J., Tsvetkov, Denis V., Dmitriev, … Materials Research Society	8 Conference Proceedings Optoelectronic and Structural Properties of High-Quality GaN Grown by Hydride Vapor Phase Epitaxy Molnar, R. J., Aggarwal, R., Liau, Z-L., Brown, E. R., Melngailis, I., Gotz, W., Romano, L. T., Johnson, N. M. MRS - Materials Research Society
3 Conference Proceedings Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples Chen, Y., Roshko, A., Bertness, K.A., Readey, D.W., Allerman, A.A., Tan, M., Tandon, A. Materials Research Society	9 Conference Proceedings GaN grown using trimethylgallium and triethylgallium Saxler,A., Kung,P., Zhang,X., Walker,D., Solomon,J., Mitchel,W.C., Razeghi,M. Trans Tech Publications
4 Conference Proceedings High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates Knap, W., Borovitskaya, E., Shur, M. S., Gaska, R., Brandt, B., Maude, D., Frayssinet, E., Lorenzini, P., Grandjean, N., … Materials Research Society	10 Conference Proceedings *STRUCTURAL PERFECTION OF InGaAs/InP SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY: A HIGH-RESOLUTION X-RAY DIFFRACTION STUDY vanderberg, J. M., Panish, M. B., Hamm,. R. A. Materials Research Society
5 Conference Proceedings Properties of Homoepitaxially MBE-Grown GaN Suski, T., Krueger, J., Kisielowski, C., Phatak, P., Leung, M. S. H., Liliental-Weber, Z., Gassmann, A., Newman, N., … MRS - Materials Research Society	11 Conference Proceedings Hybrid glass structures for telecommunication applications (Ivited Paper) Simpson, R.D., Hayden, J.S., Conzone, S.D., Callicoatt, B., Roshko, A., Sanford, N.A. SPIE-The International Society for Optical Engineering
6 Conference Proceedings Calculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiC S.Y. Davydov, A.A. Lebedev Trans Tech Publications	12 Conference Proceedings Pulsed Laser Deposition of Highly Crystalline GaN Films on Sapphire Vispute, R. D., Talyansky, V., Choopun, S., Enck, R., Dahmas, T., Ogale, S. B., Shama, R. P., Venkatesan, T., Li, Y. X., … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12