Temperature and Dislocation Density Effects on the Thermal Conductivity of Bulk Gallium Nitride

Temperature and Dislocation Density Effects on the Thermal Conductivity of Bulk Gallium Nitride

Author(s):

Publication title:

GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

892

Pub. Year:

2006

Page(from):

749

Page(to):

756

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998469 [1558998462]

Language:

English

Call no.:

M23500/892

Type:

Conference Proceedings

Details

TDL ID:	ZA00015789
Series ID:	PA00000011
Conf. info. (Name):	Symposium on GaN, AIN, InN and related materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2005.11.28-2005.12.02

Similar Items:

1 Conference Proceedings Growth and Fabrication of 2 Inch Free-Standing GaN Substrates via the Boule Growth Method Hanser, Drew, Liu, Lianghong, Preble, Edward A., Thomas, Darin, Williams, Mark Materials Research Society	7 Conference Proceedings Growth of bulk polycrystalline Gallium Nitride and Indium Nitride at sub-atmospheric pressure Schultz, Brian D., Argoitia, Alberto, Hayman, Cliff C., Angus, John C., Dyck, Jeffrey S., Kash, Kathleen, Yang, Nam Electrochemical Society
2 Conference Proceedings Thermal Conductivity of GaN Grown on Silicon Substrates Mion, C., Chang, Y.C., Muth, J.F., Rajagopal, P., Brown, J.D. Materials Research Society	8 Conference Proceedings Low-Temperature Thermal Conductivity of Rubrene Single Crystals: Quantitative Estimation of Defect Density in Bulk and Film Crystals Jun Takeya, Yugo Okada, M. Uno Materials Research Society
3 Conference Proceedings Improved Switching Response of VO₂ Devices Deposited on Silicon Nitride Membranes Yan Wang, John F. Muth Materials Research Society	9 Conference Proceedings Optical Properties of High Mole-Fraction Europium Doped Beta Gallium Oxide Patrick Wellenius, Steven LeBoeuf, Robert M. Kolbas, Michael Aumer, Jesse Tucker, John F. Muth Materials Research Society
4 Conference Proceedings Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis T. Paskova, A. Hanser, E. Preble, K. Evans, R. Kröger Society of Photo-optical Instrumentation Engineers	10 Conference Proceedings Growth of Bulk, Polycrystalline Gallium and Indium Nitride at Subatmospheric Pressures Angus, John C., Argoitia, Alberto, Hayman, Cliff C., Wang, Long, Dyck, Jeffrey S., Kash, Kathleen MRS - Materials Research Society
5 Conference Proceedings Synthesis of Bulk, Polycrystalline Gallium Nitride at Low Pressures Argoitia, Alberto, Angus, John C., Hayman, Cliff C., Wang, Long, Dyck, Jeffrey S., Kash, Kathleen MRS - Materials Research Society	11 Conference Proceedings Distinguishing Negatively-Charged and Highly Conductive Dislocations in Gallium Nitride Using Scanning Kelvin Probe and Conductive Atomic Force Microscopy Simpkins, Blake S., Yu, Edward T., Waltereit, Patrick, Speck, James S. Materials Research Society
6 Conference Proceedings Peudeo-EpitaxyTM process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Carlson, E. P., Robin, B. M., Davis, R. F. Trans Tech Publications	12 Conference Proceedings Properties of bulk Gallium Nitride crystals Suski, T., Perlin, P., Leszczynski, M., Teisseyre, H., Grzegory, I., Bockowski, M., Jun, J., Potowski, S., … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12