Thick AlN Layers Grown by HVPE on Sapphire Substrates

Thick AlN Layers Grown by HVPE on Sapphire Substrates

Author(s):

Soukhoveev, Vitali

Publication title:

GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

892

Pub. Year:

2006

Page(from):

743

Page(to):

748

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998469 [1558998462]

Language:

English

Call no.:

M23500/892

Type:

Conference Proceedings

Details

TDL ID:	ZA00015789
Series ID:	PA00000011
Conf. info. (Name):	Symposium on GaN, AIN, InN and related materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2005.11.28-2005.12.02

Similar Items:

1 Conference Proceedings InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AIN Templates Syrkin, Alexander, Usikov, Alexander, Soukhoveev, Vitali, Kovalenkov, Oleg, Ivantsov, Vladimir, Dmitriev, Vladimir, … Materials Research Society	7 Conference Proceedings Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts Syrkin, A., Dmitriev, V., Kovalenkov, O., Bauman, D., Crofton, J. Trans Tech Publications
2 Conference Proceedings HVPE-Grown AlN-GaN Based Structures for UV Spectral Region USIKOV, A. S., MELNIK, YU., PECHNIKOV, A. I., SOUKHOVEEV, V. A., KOVALENKOV, O. V., SHAPOVALOVA, E., KARPOV, S. YU., … Kluwer Academic Publishers	8 Conference Proceedings AlGaN materials for semiconductor sensors and emitters in 200- to 365-nm range Usikov, A. S., Shapvalova, E. V., Melnik, Y. V., Ivantsov, V. A., Dmitriev, V. A., Collins, C. J., Sampath, A. V., … SPIE - The International Society of Optical Engineering
3 Conference Proceedings P-Type GaN Epitaxial Layers and AlGaN/GaN Heterostructures with High Hole Concentration and Mobility Grown by HVPE Usikov, A., Kovalenkov, O., Ivantsov, V., Sukhoveev, V., Dmitriev, V., Shmidt, N., Poloskin, D., Petrov, V., Ratnikov, … Materials Research Society	9 Conference Proceedings Deep UV AIGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AIGaN/sapphire substrates (Invited Paper) [6121-29] Nikishin, S., Borisov, B., Kuryatkov, V., Usikov, A., Dmitriev, V., Holtz, M. SPIE - The International Society of Optical Engineering
4 Conference Proceedings Lattice Constant Variation in GaN:Si Layers Grown by HVPE Usikov, A., Kovalenkov, O.V., Mastro, M.M., Tsvetkov, D.V., Pechnikov, A.I., Soukhoveev, V.A., Shapovalova, Y.V., … Materials Research Society	10 Conference Proceedings HVPE-Grown AlGaN/GaN HEMTs Luo, B., Ren, F., Mastro, M. A., Tsvetkov, D., Pechnikov, A., Soukhoveev, V., Dmitriev, V., Baik, K. H., Pearton, S. J. Materials Research Society
5 Conference Proceedings AlGaN/GaN Structures Grown by HVPE: Growth and Characterization Mastro, M. A., Tsvetkov, D. V., Pechnikov, A. I., Soukhoveev, V. A., Gainer, G. H., Usikov, A., Dmitriev, V., Luo, B., … Materials Research Society	11 Conference Proceedings Device Challenges for Making a p-Side Down HVPE-Grown n-InGaN/p-GaN Single Heterostructure LED M. Reed, E.D. Readinger, P. Shen, M. Wraback, A. Syrkin Electrochemical Society
6 Conference Proceedings Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts Syrkin, A., Dmitriev, V., Kovalenkov, O., Bauman, D., Crofton, J. Trans Tech Publications	12 Conference Proceedings Deep-ultraviolet photodetectors grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates [6398-34] Holtz, M., Kuyatkov, V., Song, D. Y., Borisov, B., Nikishin, S., Usikov, A., Dmitriev, V., Kudryavtsev, Y., Asamoza, R. SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12