Dislocation Reduction and Structural Properties of GaN Layers Grown on N-Implanted AlN/Si (111) Substrates

Dislocation Reduction and Structural Properties of GaN Layers Grown on N-Implanted AlN/Si (111) Substrates

Author(s):

Publication title:

GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

892

Pub. Year:

2006

Page(from):

537

Page(to):

542

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998469 [1558998462]

Language:

English

Call no.:

M23500/892

Type:

Conference Proceedings

Details

TDL ID:	ZA00015789
Series ID:	PA00000011
Conf. info. (Name):	Symposium on GaN, AIN, InN and related materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2005.11.28-2005.12.02

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