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Optimization of SiGe Graded Buffer Defectivity and Throughput by Means of High Growth Temperature and Pre-Threaded Substrates

Author(s):
Publication title:
Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
891
Pub. Year:
2006
Page(from):
573
Page(to):
578
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998452 [1558998454]
Language:
English
Call no.:
M23500/891
Type:
Conference Proceedings

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