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CHARACTERIZATION OF DOPED GeXSi1-X MULTIPLE QUANTUM WELL STRUCTURES FOR FAR-IR DETECTORS

Author(s):
Publication title:
Infrared detectors : materials, processing, and devices : symposium held April 14-16, 1993, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
299
Pub. Year:
1994
Page(from):
267
Page(to):
272
Pages:
6
Pub. info.:
Pittsburgh, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558991958 [1558991956]
Language:
English
Call no.:
M23500/299
Type:
Conference Proceedings

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