DIFFERENTIALLY STRAINED P-DOPED QUANTUM WELL INFRARED PHOTODETECTOR
- Author(s):
- Publication title:
- Infrared detectors : materials, processing, and devices : symposium held April 14-16, 1993, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 299
- Pub. Year:
- 1994
- Page(from):
- 15
- Page(to):
- 20
- Pages:
- 6
- Pub. info.:
- Pittsburgh, PA: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991958 [1558991956]
- Language:
- English
- Call no.:
- M23500/299
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Predictions of the responsivity of terahertz quantum well infrared photodetectors
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
8
Conference Proceedings
Normal Incidence P-Type InGaAs/InGaAlAs Strained Quantum Well Infrared Photodetector
Electrochemical Society |
Kluwer Academic Publishers |
9
Conference Proceedings
Noise Performance of p-Type Strained Layer Quantum Well Infrared Photodetectors
Electrochemical Society |
SPIE - The International Society for Optical Engineering |
10
Conference Proceedings
Strained p-type InGaAs/AlGaAs multipe quantum well infrared photodetectors
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
11
Conference Proceedings
Temperature dependence of quantum well infrared photodetector focal plane array characteristics
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
12
Conference Proceedings
Extrinsic Photoluminescence in Unintentionally and Magnesium Doped GaInAs/GaAs Strained Quantum Wells
Plenum Press |