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DEPENDENCE OF STEADY-STATE DEFECT DENSITY IN HYDROGENATED AMORPHOUS SILICON ON CARRIER GENERATION RATE STUDIED OVER A WIDE RANGE

Author(s):
Publication title:
Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
297
Pub. Year:
1993
Page(from):
577
Page(to):
582
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991934 [155899193X]
Language:
English
Call no.:
M23500/297
Type:
Conference Proceedings

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