DEFECT RELAXATION IN a-Si:H STUDIED BY DEFECT ABSORPTION AND LUMINESCENCE
- Author(s):
- Publication title:
- Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 297
- Pub. Year:
- 1993
- Page(from):
- 327
- Page(to):
- 332
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991934 [155899193X]
- Language:
- English
- Call no.:
- M23500/297
- Type:
- Conference Proceedings
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