RADIATION HARDENING OF SIMOX BURIED OXIDE BY NITRIDATION
- Author(s):
- Publication title:
- Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 284
- Pub. Year:
- 1993
- Page(from):
- 587
- Page(to):
- 594
- Pages:
- 8
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991798 [1558991794]
- Language:
- English
- Call no.:
- M23500/284
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
Behaviour of buried oxides in SOl-SIMOX transistors under ionizing radiation
Electrochemical Society |
Electrochemical Society |
8
Conference Proceedings
Relaxable, slow charge trapping on silicon-on-insulator (SOT) mesa sidewalls
Electrochemical Society |
3
Conference Proceedings
Experimental investigations of thermal conductivity of buried oxides in SIMOX and BESOI wafers
Electrochemical Society |
9
Conference Proceedings
High current injected charge-to-breakdown characteristics of thin gate oxide on SIMOX SOI having different buried oxide thicknesses
Electrochemical Society |
Electrochemical Society |
10
Conference Proceedings
Infrared absorption study of buried oxides of single and triple implanted SIMOX structures
Electrochemical Society |
Kluwer Academic Publishers |
Electrochemical Society |
Electrochemical Society |
Materials Research Society |