HIGH CHANNEL MOBILITY a-Si:H THIN FILM TRANSISTORS WITH OXIDE-NITRIDE DIELECTRICS

HIGH CHANNEL MOBILITY a-Si:H THIN FILM TRANSISTORS WITH OXIDE-NITRIDE DIELECTRICS

Author(s):

Publication title:

Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

284

Pub. Year:

1993

Page(from):

413

Page(to):

418

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991798 [1558991794]

Language:

English

Call no.:

M23500/284

Type:

Conference Proceedings

Details

TDL ID:	ZA00015768
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous insulating thin films
Conf. info. (Number):	1992
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1992.12.01-1992.12.04

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