ELECTRICAL PROPERTIES OF BORON-DOPED μc-Si:H PREPARED BY REACTIVE MAGNETRON SPUTTERING FROM c-Si TARGETS

ELECTRICAL PROPERTIES OF BORON-DOPED μc-Si:H PREPARED BY REACTIVE MAGNETRON SPUTTERING FROM c-Si TARGETS

Author(s):

Publication title:

Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

283

Pub. Year:

1993

Page(from):

567

Page(to):

572

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991781 [1558991786]

Language:

English

Call no.:

M23500/283

Type:

Conference Proceedings

Details

TDL ID:	ZA00015767
Series ID:	PA00000011
Conf. info. (Name):	Symposium on microcrystalline semiconductors
Conf. info. (Number):	1992
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1992.11.30-1992.12.04

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