CHANNEL LAYER SURFACE MODIFICATIONS IN a-Si:H THIN FILM TRANSISTORS WITH OXIDE/NITRIDE DIELECTRIC LAYERS

CHANNEL LAYER SURFACE MODIFICATIONS IN a-Si:H THIN FILM TRANSISTORS WITH OXIDE/NITRIDE DIELECTRIC LAYERS

Author(s):

Publication title:

Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

282

Pub. Year:

1993

Page(from):

505

Page(to):

510

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991774 [1558991778]

Language:

English

Call no.:

M23500/282

Type:

Conference Proceedings

Details

TDL ID:	ZA00015766
Series ID:	PA00000011
Conf. info. (Name):	Symposium on chemical perspectives of microelectric materials
Conf. info. (Number):	3rd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1992.11.30-1992.12.03

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