STUDY OF THE TRANSVERSAL ELECTRON MOBILITY IN HETEROJUNCTION BIPOLAR TRANSISTORS WITH STRAINED Si1-XGeX -BASE

STUDY OF THE TRANSVERSAL ELECTRON MOBILITY IN HETEROJUNCTION BIPOLAR TRANSISTORS WITH STRAINED Si1-XGeX -BASE

Author(s):

Publication title:

Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

281

Pub. Year:

1993

Page(from):

409

Page(to):

414

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991767 [155899176X]

Language:

English

Call no.:

M23500/281

Type:

Conference Proceedings

Details

TDL ID:	ZA00015765
Series ID:	PA00000011
Conf. info. (Name):	Symposium on semiconductor heterostructures for photonic and electronic applications
Conf. info. (Number):	1992
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1992.11.30-1992.12.04

Similar Items:

1 Conference Proceedings X-RAY DIFFRACTION AND REFLECTANCE, RAMAN SCATTERING AND PHOTOLUMINESCENCE CHARACTERIZATION OF THERMALLY ANNEALED EPITAXIAL Si1-XGeX LAYERS Libezny, M., De WoIf, I., Poortmans, J., Van Ammel, A., Caymax, M., Holy, V., Vi-da, F., Kub-na, J., Werner, K., Ishida, … Materials Research Society	7 Conference Proceedings Impact of the Ge Content on the Radiation Hardness of Heterojunction Diodes in SiGe Strained Layers Ohyama, H., Simoen, E., Claeys, C., Takami, Y., Hayama, K., Hakata, T., Tokuyama, J., Kobayashi, K., Sunaga, H., … MRS - Materials Research Society
2 Conference Proceedings OPTIMIZATION OF Si-WAFER CLEANING AND THE USE OF BUFFER-LAYERS FOR EPITAXIAL GROWTH OF SiGe-LAYERS BY VLPCVD AT T = 650 C Caymax, Matty R., Poortmans, J., Van Ammel, A., Vandervorst, W., Vanhellemont, J., Nijs, J. Materials Research Society	8 Conference Proceedings ION IMPLANTATION OF HIGH DOSES OF Co IN Si1-xGex ALLOYS Lauwers, A., Maex, K., Vandervorst, W., Brijs, G., Poortmans, J., Caymax, M., Vanhellemont, J., Petersson, S. Materials Research Society
3 Conference Proceedings VLPCVD HETEROEPITAXIAL GROWTH OF VERY THIN Ge-LAYERS ON Si-SUBSTRATES Caymax,. Matty R., Poortmans, J., Van Ammel, A., Nijs, J., Vandervorst, W., Vanhellemont, J., Brijs, B. Materials Research Society	9 Conference Proceedings Degradation and Recovery of Si1-xGex Devices by Irradiation Ohyama, H., Vanhellemont, J., Takami, Y., Hayama, K., Kudo, T., Hakata, T., Kobayashi, K., Sunaga, H., Hironaka, I., … MRS - Materials Research Society
4 Conference Proceedings DEGRADATION AND RECOVERY OF BORON DOPED STRAINED SILICON GERMANIUM LAYERS AFTER 1-MeV ELECTRON IRRADIATION Ohyama, H., Vanhellemont, J., Trauwaert, M.-A., Poortmans, J., Caymax, M., Clauws, P. Materials Research Society	10 Conference Proceedings HETEROJUNCTION BIPOLAR TRANSISTORS (HBT) WITH a-SI :H OR pc-Si EMITTER Symons, J., Nijs, J., Vanhellemont, J., Baert, K., Michiel, H., Willeke, G., Vandervorst, W., Mertens, R. Materials Research Society
5 Conference Proceedings Structural and Electrical Characterization of FeSix-Layers (1｡蛉｡？) Prepared by RTP of Fe Layers Sputtered on Si (100) Libezny, M., Poortmans, J., Amesz, P. H., Donaton, R. A., Larsen, K. Kyllesbech, Vandenabeele, P., Jonckx, F., Maex, K., … MRS - Materials Research Society	11 Conference Proceedings Lattiee defects in Si1-xGex epitaxial diodes induced by 20-MeV alpha rays Ohyama,H., Vanhellemont,J., Simoen,E., Claeys,C., Takami,Y., Hayama,K., Sunaga,H., Poortmans,J., Caymax,M. Trans Tech Publications
6 Conference Proceedings Tailored Si Layers on Silicon Oxide Obtained by Thermal CVD Beaucarne, G., Poortmans, J., Caymax, M., Nijs, J., Mertens, R. MRS - Materials Research Society	12 Conference Proceedings Irradiation Induced Lattice Defects in Si1-xGex Epitaxial Devices Ohyama,H., Vanhellemont,J., Takami,Y., Hayama,K., Kudo,T., Hakata,T., Kobayashi,K., Sunaga,H., Poortmans,J., Caymax,M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12