OPTICAL, ELECTRICAL, AND STRUCTURAL CHARACTERIZATION OF GaInAsP/InP LAYERS GROWN ON SILICON SUBSTRATE FOR 1.35 μm LASER APPLICATIONS

OPTICAL, ELECTRICAL, AND STRUCTURAL CHARACTERIZATION OF GaInAsP/InP LAYERS GROWN ON SILICON SUBSTRATE FOR 1.35 μm LASER APPLICATIONS

Author(s):

Publication title:

Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

281

Pub. Year:

1993

Page(from):

369

Page(to):

374

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991767 [155899176X]

Language:

English

Call no.:

M23500/281

Type:

Conference Proceedings

Details

TDL ID:	ZA00015765
Series ID:	PA00000011
Conf. info. (Name):	Symposium on semiconductor heterostructures for photonic and electronic applications
Conf. info. (Number):	1992
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1992.11.30-1992.12.04

Similar Items:

1 Conference Proceedings Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications Erdtmann,M., Jiang,J., Matlis,A.W., Tahraoui,A., Jelen,C.L., Razeghi,M., Brown,G.J. SPIE - The International Society for Optical Engineering	7 Conference Proceedings AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications McClintock,R., Sandvik,P.M., Mi,K., Shahedipour,F., Yasan,A., Jelen,C.L., Kung,P., Razeghi,M. SPIE-The International Society for Optical Engineering
2 Conference Proceedings GaInAs/InP quantum well infrared photodetectors grown on Si substrates Razeghi,M., Jiang,J., Jelen,C.L., Brown,G.J. SPIE-The International Society for Optical Engineering	8 Conference Proceedings COMPARATIVE STUDIES OF THE STRUCTURAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIEC OF EPITAXIAL GaAs LAYERS GROWN ON EITHER Si, Ge OR Ge COATED S1 SUBSTRATES BY … Awal, Abdul M., Lee, E. H., Chan, E. Y., Lum R. M., Klingert, J. K., Sheng, T. T., Hopkins, L. C., Opila, R. L. Materials Research Society
3 Conference Proceedings Growth and Characterization of BRS GaInAsP-GaAs Laser Emitting at 0.8ｦﾌm by Gas-Source Molecular Beam Epitaxy Jelen, C., Slivken, S., Diaz, J., Erdtmann, M., Kim, S., Wu, D., Razeghi, M. MRS - Materials Research Society	9 Conference Proceedings Solar-blind Alx Ga1-x N p-i-n photodetectors grown on LEO and non-LEO GaN Sandvik,P.M., Walker,D., Kung,P., Mi,K., Shahedipour,F., Kumar,V., Zhang,X., Diaz,J., Jelen,C.L., Razeghi,M. SPIE - The International Society for Optical Engineering
4 Conference Proceedings GROWTH OF InSb/GaAs LAYERS ON YIG-COATED GGG SUBSTRATE Jelen, C., Charriere, S., Razeghi, M., Leppert, V.J. Materials Research Society	10 Conference Proceedings Integrated 1.3-μm InGaAlAs-InP laser-modulator with double-stack MQW layer structure Knoedl, T., Hanke, C., Saravanan, B.K., Peschke, M., Schreiner, R., Stegmueller, B. SPIE - The International Society of Optical Engineering
5 Conference Proceedings High-responsivity GaInAs/InP quantum well infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition Erdtmann,M., Matlis,A.W., Jelen,C.L., Razeghi,M., Brown,C.J. SPIE - The International Society for Optical Engineering	11 Conference Proceedings Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures M. Motyka, K. Ryczko, J. Andrzejewski, R. Kudrawiec, J. Misiewicz, F. Lelarge, B. Rousseau, G. Patriarche SPIE - The International Society of Optical Engineering
6 Conference Proceedings STRUCTURAL CHARACTERIZATION OF InAlAs/InGaAs LAYERS GROWN ON InP PATTERNED SUBSTRATES Peiro, F., Cornet, A., Morante, J. R., Zekentes, K., Georgakilas, A. MRS - Materials Research Society	12 Conference Proceedings Multicolor 4- to 20-ｦﾌm InP-based quantum well infrared photodetectors Jelen,C., Slivken,S., Brown,G.J., Razeghi,M. SPIE - The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12