CHARACTERISTICS AND GROWTH OF STRAINED-LAYER InGaAs/GaInAsP/GaInP QUANTUM WELL LASERS

CHARACTERISTICS AND GROWTH OF STRAINED-LAYER InGaAs/GaInAsP/GaInP QUANTUM WELL LASERS

Author(s):

Publication title:

Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

281

Pub. Year:

1993

Page(from):

293

Page(to):

300

Pages:

8

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991767 [155899176X]

Language:

English

Call no.:

M23500/281

Type:

Conference Proceedings

Details

TDL ID:	ZA00015765
Series ID:	PA00000011
Conf. info. (Name):	Symposium on semiconductor heterostructures for photonic and electronic applications
Conf. info. (Number):	1992
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1992.11.30-1992.12.04

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